Bending and punching characteristics of aluminum sheets using the quasi-continuum method

• Man-Ping Chang,
• Shang-Jui Lin and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2022, 13, 1303–1315, doi:10.3762/bjnano.13.108

• highest. However, there is no much residual flash on the cutting surface of O2, so the residual stress of the O2 substrate is low. Compared with O1 and O2, O3 leaves the most residual flash on the cutting surfaces, which leads to the largest friction between the punch and the cutting surface during the

• unloading process. Therefore, it has the largest residual stress in the O3 substrate. According to the above results, the difference of crystal orientations of the Al workpiece has shown a great influence on the punching behaviors, which can provide a reference when selecting the punching substrate and

Relationship between corrosion and nanoscale friction on a metallic glass

• Haoran Ma and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2022, 13, 236–244, doi:10.3762/bjnano.13.18

• copper surfaces, where it was suggested that more electrons escape in the vicinity of a peak than in a valley [27]. A surface undulation with parallel valleys on our ZrNiTi MG ribbons may be the reason for the distribution of pits along lines. Another possible reason is residual stress, indicated by the

Determination of elastic moduli of elastic–plastic microspherical materials using nanoindentation simulation without mechanical polishing

• Hongzhou Li and
• Jialian Chen

Beilstein J. Nanotechnol. 2021, 12, 213–221, doi:10.3762/bjnano.12.17

• , the residual stress distribution inside the microsphere, and the permanent deformation of the microsphere have been predicted via finite element analyses. Figure 7 shows the stress fields at maximum indentation force, the permanent deformation, and residual stress distributions inside a microsphere of

• distribution inside a microsphere of 11.5 µm radius for an indentation depth of 1.15 µm at E/σy = 10: (a) at maximum load; (b) after complete unloading; (c) enlarged image of the residual stress distribution. Funding This work was supported by the Startup Fund from Fujian Normal University; and the National

Oxidation of Au/Ag films by oxygen plasma: phase separation and generation of nanoporosity

• Abdel-Aziz El Mel,
• Said A. Mansour,
• Mujaheed Pasha,
• Atef Zekri,
• Janarthanan Ponraj,
• Akshath Shetty and
• Yousef Haik

Beilstein J. Nanotechnol. 2020, 11, 1608–1614, doi:10.3762/bjnano.11.143

• residual stress. The repeated oxidation and cracking events result in the transformation of the metallic silver into nanoporous silver oxide when it reaches the surface of the film. In parallel to the oxidation reaction, silver keeps diffusing from the alloy film toward the surface, feeding the metallic

Vibration analysis and pull-in instability behavior in a multiwalled piezoelectric nanosensor with fluid flow conveyance

• Sayyid H. Hashemi Kachapi

Beilstein J. Nanotechnol. 2020, 11, 1072–1081, doi:10.3762/bjnano.11.92

• constants, residual stress, piezoelectric constants and mass density, are considered for analysis of the dimensionless natural frequency with respect to the viscous fluid velocity and pull-in voltage of the FC-MWPENSs. Keywords: electrostatic excitation; piezoelectric nanosensor; pull-in voltage; stability

• frequency (DNF) of multiwalled piezoelectric nanosensors conveying viscous fluid has not yet been studied. In the present study, the effect of surface/interface parameters such as Lame’s constants (λI,S, µI,S), residual stress piezoelectric constants and mass density (ρI,S) are studied for analysis of

• , µI,S), residual stress piezoelectric constants and mass density (ρI,S), are investigated for analysis of the dimensionless natural frequency with respect to viscous fluid velocity and pull-in voltage In order to simplify the presentation, CC, SS and CS represent the clamped edge, simply supported

Integration of sharp silicon nitride tips into high-speed SU8 cantilevers in a batch fabrication process

• Nahid Hosseini,
• Matthias Neuenschwander,
• Oliver Peric,
• Santiago H. Andany,
• Jonathan D. Adams and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2019, 10, 2357–2363, doi:10.3762/bjnano.10.226

• example for nanomechanical mapping of biological samples. In general, SU8 cantilevers suffer from residual mean stress and residual stress gradients in the beam. These residual stresses can bend the cantilevers and cause issues with aligning the laser and approaching the sample. Keller et al. have shown

Synthesis and characterization of quaternary La(Sr)S–TaS₂ misfit-layered nanotubes

• Marco Serra,
• Erumpukuthickal Ashokkumar Anumol,
• Dalit Stolovas,
• Iddo Pinkas,
• Ernesto Joselevich,
• Reshef Tenne,
• Andrey Enyashin and
• Francis Leonard Deepak

Beilstein J. Nanotechnol. 2019, 10, 1112–1124, doi:10.3762/bjnano.10.111

• Ry. All calculations were performed using variable-cell and atomic position relaxations, with convergence criteria corresponding to the maximum residual stress of 0.1 GPa for each component of the stress tensor, and the maximum residual force component of 0.05 eV/Å. Preliminary test calculations of

Bidirectional biomimetic flow sensing with antiparallel and curved artificial hair sensors

• Claudio Abels,
• Antonio Qualtieri,
• Toni Lober,
• Alessandro Mariotti,
• Lily D. Chambers,
• Massimo De Vittorio,
• William M. Megill and
• Francesco Rizzi

Beilstein J. Nanotechnol. 2019, 10, 32–46, doi:10.3762/bjnano.10.4

• acid (HF) back side wet etching step removes the SiO2 layer (2 μm etching depth). By performing a last KOH top side wet etching, the exposed (U-shaped) silicon device layer around the cantilevers is removed (2 μm etching depth). Due to the residual stress in the material, the released SiN/Si bilayer

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• tests [19]. The reliability of Mo-based NEM switches was found to be size-dependent due to the influence of residual stress in the material on the shape of the switching element. Copper has been used as a NEM switch structural material to increase the feasibility of fabrication benefitting from a

• the best-achieved turn-on delay of 400 ns. When tested for durability, the Ru device withstood more than 2 × 106 switching cycles at 1 kHz frequency. However, when downscaling Ru NEM switches, residual stress must be accurately controlled to avoid the buckling of beams after etching of the sacrificial

• residual stress within the thin film layers which has to be taken into account for NEM switch applications as it can cause unwanted out-of-plane deformations of switching elements [6][142]. Therefore, specific treatments for switching elements such as high-temperature annealing is necessary to release the

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• , catalysis and energy storage. Keywords: activation energy; plasmas; residual stress; vertical graphene nanosheets; wettability; Introduction Vertical graphene nanosheets (VGNs) consist of interconnected 3D porous networks of vertically oriented graphitic sheets, which are aligned perpendicularly to the

• stress for the vertical growth is calculated using the empirical Equation 2 [54]: where ΔωD is the displacement of the D band in the Raman spectra. Here, the position of D band (ωD) of VGNs grown at 600 °C is considered as a reference point. It is found from Figure 3c that the residual stress decreases

• with increasing growth temperature. The residual stress is described as internal stress in nanostructured materials. The generation of residual stress during growth can be attributed to: (i) thermal stress, which occurs because of the difference in thermal expansion coefficient between the substrate

Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting

• Sun-Kyu Lee,
• Sori Hwang,
• Yoon-Kee Kim and
• Yong-Jun Oh

Beilstein J. Nanotechnol. 2017, 8, 1049–1055, doi:10.3762/bjnano.8.106

• a hardness of 7 GPa and a modulus of 55 GPa, the resist was expected to mostly transform into pure silica in the annealing process at 550 °C. The resist annealed at 600 °C showed dramatic degradation of its mechanical properties. This is attributed to the residual stress built up between the

Annealing-induced recovery of indents in thin Au(Fe) bilayer films

• Anna Kosinova,
• Ruth Schwaiger,
• Leonid Klinger and
• Eugen Rabkin

Beilstein J. Nanotechnol. 2016, 7, 2088–2099, doi:10.3762/bjnano.7.199

• indents by mechanical polishing. The mechanism of the hillock formation upon heating is in that case related to the martensite–austenite phase transformation, which is affected by residual stress and very different from the irreversible mechanisms discussed in the present study. Conclusion From the

Modeling viscoelasticity through spring–dashpot models in intermittent-contact atomic force microscopy

• Enrique A. López-Guerra and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2014, 5, 2149–2163, doi:10.3762/bjnano.5.224

• not reproduce multiple relaxation times nor nonlinear elastic behavior. Wiechert model Modeling of multiple relaxation times has generally been carried out by representing a viscoelastic surface as a series of Linear Maxwell arms in parallel with an equilibrium spring that keeps a residual stress that

Tensile properties of a boron/nitrogen-doped carbon nanotube–graphene hybrid structure

• Kang Xia,
• Haifei Zhan,
• Ye Wei and
• Yuantong Gu

Beilstein J. Nanotechnol. 2014, 5, 329–336, doi:10.3762/bjnano.5.37

• deformation is found to result two dangling layers (upper and lower) that adhere to each other. This adhesive behavior is the reason for the residual stress, which is highlighted in Figure 7. With sufficient elongation, the dangling layers finally separate from each other by van der Waals interaction. The

Deformation-induced grain growth and twinning in nanocrystalline palladium thin films

• Aaron Kobler,
• Jochen Lohmiller,
• Jonathan Schäfer,
• Michael Kerber,
• Anna Castrup,
• Ankush Kashiwar,
• Patric A. Gruber,
• Karsten Albe,
• Horst Hahn and
• Christian Kübel

Beilstein J. Nanotechnol. 2013, 4, 554–566, doi:10.3762/bjnano.4.64

• minimize residual stress and to obtain dense and high purity ncPd films [18]. Although the sputter parameters were chosen to be the same for each sample set, small fluctuations in the pressure have led to sample sets with slightly different residual stresses and different initial twin densities. Table 1

• twin boundaries per grain. This has not been evident from classical DF-TEM (see Supporting Information File 1). The two sample sets examined here in detail, show different initial microstructures: the sample grown with slight compressive residual stress (Table 1) exhibits a higher twin density compared

• twin density is calculated as twin boundaries per grain detected by human inspection of the DF-TEM images. Conventional XRD measurements were performed in Bragg–Brentano geometry using a Bruker D 8 Discover diffractometer to determine the crystallite size and residual stress. The measured profiles were

Mechanical characterization of carbon nanomembranes from self-assembled monolayers

• Xianghui Zhang,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2011, 2, 826–833, doi:10.3762/bjnano.2.92

• pressure. The change of the indentation depth Δδ is given by [10] where δ0 is the step height in topographic AFM images of the nonpressurized membrane, E is the Young’s modulus, σ0 is the residual stress, ν is the Poisson’s ratio and 2a is the length of the short edge of the membrane. The corrected

• deflection h is then given by Note that Δδ is negative, i.e., the corrected deflection is always smaller than the measured value hm. This correction scheme typically results in an increase in the Young’s modulus and a decrease in the residual stress by approximately 5%. Elasticity In a bulge test, the

• the center of the membrane h. The membrane sizes were measured in a scanning electron microscope (SEM). The constants c1 and c2 were taken from the literature [17]. The Young’s modulus E and the residual stress σ0 are accessible by fitting the above equation to the measured data. Three different